? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 1000 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 v ces t j = 25 c25 a v ge = 0 v t j = 125 c 250 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i ce90 , v ge = 15v 2.2 2.7 v igbt symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c16a i c90 t c = 90 c8a i cm t c = 25 c, 1 ms 32 a ssoa v ge = 15 v, t vj = 125 c, r g = 120 ? i cm = 16 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c54w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque with screw m3 0.45/4 nm/lb.in. mounting torque with screw m3.5 0.55/5 nm/lb.in. weight to-220 4 g to-263 2 g ds98565c(12/03) features ? international standard packages jedec to-220ab and to-263aa ? low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? capacitor discharge advantages ? easy to mount with one screw ? reduces assembly time and cost ? high power density g e c (tab) to-263 aa (ixga) g c e to-220ab (ixgp) ixga 8n100 ixgp 8n100 preliminary data sheet v ces = 1000 v i c25 = 16 a v ce(sat) = 2.7 v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 to-263 aa outline 1. gate 2. collector 3. emitter 4. collector bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - collector 3 - emitter 4 - collector bottom side to-220 ab dimensions symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 v ce = 10 v 4 7.6 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 10 v, v ce = 10v 40 a c ies 595 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 34 pf c res 10 pf q g 26.5 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 4.8 nc q gc 8.5 nc t d(on) 15 ns t ri 30 ns t d(off) 600 1000 ns t fi 390 900 ns e off 2.3 5.0 mj t d(on) 15 ns t ri 30 ns e on 0.5 mj t d(off) 800 ns t fi 630 ns e off 3.7 mj r thjc 2.3 k/w r thck to-220 0.5 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 800 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 800 v, r g = r off = 120 ? remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixga 8n100 ixgp 8n100 min. recommended footprint (dimensions in inches and mm)
? 2003 ixys all rights reserved ixga 8n100 ixgp 8n100 fig. 2. extended output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 0 2 4 6 8 101214161820 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 2 4 6 8 10 12 14 16 0.511.522.5 33.544.55 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 2 4 6 8 10 12 14 16 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (s at) - normalize d i c = 8a i c = 4a v ge = 15v i c = 16a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1 2 3 4 5 6 7 8 5 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 16a 8a 4a fig. 6. input adm ittance 0 2 4 6 8 10 12 14 16 33.544.555.566.57 v g e - volts i c - amperes t j = 125oc 25oc -40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 ixga 8n100 ixgp 8n100 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 024681012141618 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. gate charge 0 3 6 9 12 15 0 3 6 9 12 15 18 21 24 27 q g - nanocoulombs v g e - volts v ce = 500v i c = 8a i g = 10ma fig. 9. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 10. maxim um transient therm al resistance 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w)
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